Dr Kiran Dasari is currently a postdoctoral research associate in the Electrical and Computer Engineering Department at the University of Illinois at Urbana-Champaign, USA. He completed his PhD in chemical physics at the University of Puerto Rico, USA, and his Master's at VIT University, India. Prior to his PhD, he was a project assistant at the Indian Institute of Science, Bengaluru, and was a visiting scientist at the Max-Born Institute, Germany.
His PhD thesis focused on the molecular beam epitaxial growth of high quality undoped and rare-earth doped III-nitride nanostructures for device fabrication. Yb-doped high In-content InGaN nanostructures were demonstrated with room temperature ferromagnetism and visible emission, and the growth, structural, optical and magnetic properties were compared with undoped and Er-doped InGaN. Kiran also demonstrated the growth, optical, and magnetic properties of Er-doped GaN thin films with different Er-concentrations.
Kiran's present research interests include the fabrication of GaN-based devices for optoelectronic and spintronic applications, which include lasers, solar cells, transistors, and LEDs. He is also actively involved in studying different oxide materials in collaboration with various research groups around the globe. His research has been presented in various international conferences and published in international peer-reviewed journals, including Phys. Rev. B, J. Appl. Phys., J. Phys. D: Appl. Phys.
Kiran is an active member of scientific societies including MRS and IEEE, and served as the president of the Material Research Society-UPR chapter from 2014 to 2017. He also served as a joint secretary for the Workshop on Frontiers in Electronics and Workshop on Multifunctional Nanomaterials in 2016 and 2017 in San Juan, USA.
Presently, he is serving as an Associate Editor of the Materials Science: Materials Review journal. He received an IFN graduate fellowship, sponsored by the National Science Foundation, USA, for his PhD research, and an SAP fellowship during his graduation at VIT.